4-104 up to 6 ghz low noise silicon bipolar transistor technical data features ? low noise figure: 1.6 db typical at 2.0 ghz 3.0 db typical at 4.0 ghz ? high associated gain: 14.0 db typical at 2.0 ghz 10.0 db typical at 4.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? hermetic, gold-ceramic microstrip package AT-41410 100 mil package description hewlett-packards AT-41410 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the AT-41410 is housed in a hermetic, high reliability 100 mil ceramic package. the 4 micron emitter-to- emitter pitch enables this transis- tor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. this device is de- signed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w at 1 ghz , makes this device easy to use as a low noise amplifier. the AT-41410 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8923e
4-105 AT-41410 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2,3] mw 500 t j junction temperature c 200 t stg storage temperature c -65 to 200 thermal resistance [2,4] : q jc = 170 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5.9 mw/ c for t c > 115 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 12.0 f = 4.0 ghz 6.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 19.0 v ce = 8 v, i c = 25 ma f= 4.0 ghz 18.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.3 f = 2.0 ghz 1.6 1.9 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 18.5 f = 2.0 ghz 13.0 14.0 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 25 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.2 notes: 1. for this test, the emitter is grounded.
4-106 AT-41410 typical performance, t a = 25 c frequency (ghz) figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) i c (ma) figure 3. optimum noise figure and associated gain vs. collector current and collector voltage. f = 2.0 ghz. gain (db) 0 1020 3040 figure 4. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v. 10 v 4 v frequency (ghz) figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 25 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) gain (db) i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 3040 p 1db g 1db 24 21 18 15 12 9 6 3 0 8 6 4 2 0 nf (db) 4 3 2 1 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 16 15 14 13 12 g a g a nf o nf o g a nf o nf 50 6 v 0 1020 3040 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 6 4 2 0 nf o (db) 16 14 12 10 8 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz i c (ma) figure 6. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 11 8 4 0 |s 21e | 2 gain (db) 0 1020 3040 1.0 ghz 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 10 v 4 v 6 v
4-107 AT-41410 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .61 -40 27.7 24.38 159 -40.0 .010 75 .94 -13 0.5 .60 -127 22.2 12.83 110 -30.4 .030 40 .62 -33 1.0 .60 -163 17.1 7.12 86 -28.2 .039 35 .50 -38 1.5 .60 179 13.8 4.89 71 -27.5 .042 45 .46 -42 2.0 .61 165 11.4 3.72 59 -26.0 .050 42 .45 -48 2.5 .61 157 9.7 3.04 52 -24.7 .058 46 .44 -52 3.0 .62 149 8.2 2.56 42 -23.9 .064 50 .44 -58 3.5 .63 140 7.0 2.23 31 -22.3 .077 48 .46 -68 4.0 .62 130 5.9 1.96 20 -21.3 .086 44 .48 -78 4.5 .61 120 4.9 1.76 10 -20.4 .095 41 .50 -85 5.0 .61 106 4.0 1.59 -1 -18.9 .113 38 .52 -91 5.5 .62 94 3.2 1.45 -11 -18.3 .121 33 .52 -97 6.0 .66 82 2.4 1.31 -22 -17.5 .133 30 .51 -105 AT-41410 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .45 -69 31.4 37.17 150 -39.2 .011 64 .87 -18 0.5 .58 -153 23.3 14.63 101 -33.6 .021 43 .49 -33 1.0 .59 -178 17.7 7.68 81 -30.4 .030 53 .43 -35 1.5 .60 169 14.3 5.21 68 -28.2 .039 58 .41 -40 2.0 .60 157 11.9 3.94 56 -25.8 .051 55 .41 -45 2.5 .61 151 10.1 3.20 50 -24.4 .060 55 .40 -49 3.0 .62 144 8.6 2.70 40 -23.1 .070 58 .40 -56 3.5 .63 135 7.4 2.35 30 -21.9 .080 54 .42 -66 4.0 .62 126 6.3 2.07 19 -20.5 .094 53 .44 -76 4.5 .61 116 5.3 1.85 9 -19.3 .108 45 .46 -84 5.0 .61 103 4.5 1.67 -2 -18.5 .119 41 .49 -90 5.5 .63 91 3.6 1.52 -12 -17.6 .131 34 .49 -96 6.0 .67 80 2.8 1.37 -22 -16.8 .144 29 .47 -104 a model for this device is available in the device models section. AT-41410 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.2 .12 4 0.17 0.5 1.2 .10 23 0.17 1.0 1.3 .06 49 0.16 2.0 1.6 .26 172 0.16 4.0 3.0 .46 -133 0.26
4-108 1 3 4 2 emitter emitter collector base .020 .508 .100 2.54 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .030 .76 .004 .002 .10 .05 100 mil package dimensions
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